| PART |
Description |
Maker |
| HY5DV281622DT HY5DV281622DT-33 HY5DV281622DT-36 HY |
128M(8Mx16) GDDR SDRAM
GDDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263 |
128Mbit GDDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DU573222AFM-36 HY5DU573222AFM-28 HY5DU573222AFM |
GDDR SDRAM - 256Mb
|
Hynix Semiconductor
|
| HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM |
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| HY5DU121622CTP-4 HY5DU121622CTP-5 HY5DU121622CTP-6 |
512Mb(32Mx16) GDDR SDRAM
|
Hynix Semiconductor
|
| W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU573222F-2 HY5DU573222F-22 HY5DU573222F-25 HY5 |
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DS283222BF-28 HY5DS283222BFP-28 HY5DS283222BF-4 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
http://
|
| K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Panasonic, Corp.
Samsung Semiconductor Co., Ltd.
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
