| PART |
Description |
Maker |
| IRFW624B IRFI624B IRFW624BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW624A
250V N-Channel MOSFET 4.1 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQI6N25 FQB6N25 FQB6N25TM |
250V N-Channel QFET
250V N-Channel MOSFET 5.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU214A IRFR214A |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 2.2AI（四）|52AA
|
Intersil, Corp.
|
| IRFR234B IRFU234B IRFU234BTUFP001 |
250V N-Channel B-FET / Substitute of IRFU234A
250V N-CHANNEL MOSFET
|
Fairchild Semiconductor
|
| FQA16N25C |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM214B IRFM214BTFFP001 |
250V N-Channel B-FET / Substitute of IRFM214A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS624B IRF624B IRF624 IRF624BFP001 IRFS624BFP001 |
250V N-Channel B-FET / Substitute of IRFS624 & IRFS624A
250V N-Channel B-FET / Substitute of IRF624 & IRF624A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR224 IRFU224 |
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)
HEXFET? Power MOSFET
|
International Rectifier
|
| FQT2P25 FQT2P25TF |
250V P-Channel QFET
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
| FQD6P25 FQU6P25 FQD6P25TF FQD6P25TM |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
