| PART |
Description |
Maker |
| SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications
|
TOSHIBA
|
| TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| PUMA68SV32000BM-020 PUMA68SV32000BI-015 |
1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PQCC68 25.27 X 25.27 MM, 5.08 MM HEIGHT, PLASTIC, LCC-68
1M X 32 MULTI DEVICE SRAM MODULE, 15 ns, PQCC68
|
ST Microelectronics
|
| CMLM0205 |
MULTI DISCRETE MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE?/a> SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
| MT2LSYT3272B2G-12L MT4LSYT6472B2G-12L |
32K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
64K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
|
RECOM Electronic GmbH
|
| MSM8256V-55/X0252 MSM8256V-025/X0252 MSM8256VM-025 |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDIP32
256K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
256K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDXA32
|
|
