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GT60M323 - TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60M323_482140.PDF Datasheet

 
Part No. GT60M323
Description TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

File Size 188.77K  /  6 Page  

Maker


Toshiba Semiconductor



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Part: GT60M323
Maker: TOSHIBA
Pack: TO-3PL
Stock: Reserved
Unit price for :
    50: $2.35
  100: $2.24
1000: $2.12

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