PART |
Description |
Maker |
BSP280 Q67000-S279 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开 N-channel enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
UPA651TT UPA651TT-E1 UPA651TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC Corp.
|
UPA621TT UPA621TT-E1 UPA621TT-E2 |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA620TT UPA620TT-E1 UPA620TT-E2 |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA653TT UPA653TT-E1 UPA653TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
SSM6J07FU |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|