| PART |
Description |
Maker |
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| BFP620FE7764 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| START620 |
NPN SiGe RF Transistor
|
STMicroelectronics
|
| THN6201U THN6201 THN6201E THN6201KF THN6201Z THN62 |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| BFU510 |
NPN SiGe wideband transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| NESG2101M05-T1-A NESG2101M05 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2101M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| BFP620FE6327 |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|
| NESG2021M05 NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG204619-T1-A NESG204619 NESG204619-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
