| PART |
Description |
Maker |
| IRFD9220 FN2286 |
600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET
From old datasheet system
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
|
Intersil Corporation
|
| FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTM |
200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQB5N20L FQI5N20L FQI5N20 FQI5N20LTU |
200V LOGIC N-Channel MOSFET 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| PUMA67F16000I-25 PUMA67F16000M-15 PUMA67F16000M-20 |
200NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
250NS, PGA,883C; LEVEL B FULLY COMPLIANT(EEPROM)
200NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
150NS, PDIP, IND TEMP(EEPROM)
150NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
NXP Semiconductors N.V.
|
| FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FQD12N20LTM FQD12N20LTMF085 FQD12N20LTF085 |
9 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET
200V Logic Level N-Channel MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4
High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| HUF75925D3ST HUF75925P3 HUF75831SK8 |
3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET
11A, 200V, 0.275 Ohm, N-Channel, UltraFETPower MOSFETs
11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
11A 200V 0.275 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRL630A IRL630ANL |
200V N-Channel Logic Level A-FET / Substitute of IRL630 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| 2N6790 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power
3.5A 200V 0.800 Ohm N-Channel Power
3.5A, 200V, 0.800 Ohm, N-Channel Power
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
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