| PART |
Description |
Maker |
| PTB20206 |
1.0 Watt, 470-860 MHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| PTB20101 |
175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| MRF373ASR1 MRF373AR1 MRF373A |
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
|
| HW8182C |
40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| AWB7225 |
860 MHz to 894 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| MAFRIN0436 |
Ultra Low Loss Isolator 860 MHz - 894 MHz
|
MACOM[Tyco Electronics]
|
| MAFRIN0448 |
Ultra Low Loss Isolator 860 MHz - 960 MHz
|
MACOM[Tyco Electronics]
|
| M68769SH |
RF POWER MODULE 470-512 MHz, 12.5V, 45W FM MOBILE RADIO
470-512MHz, 12.5V, 45W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| CGD91401 9397-750-08861 CGD914MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
