PART |
Description |
Maker |
AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection From old datasheet system 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28 64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation] Atmel, Corp.
|
AT28BV64-30PC AT28BV64-30JC AT28BV64-30JI |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PDIP28 64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PQCC32
|
Atmel, Corp.
|
CAT28C64A CAT28C64AI-20 28C64A-20 CAT28C64A-15 CAT |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128Kx8 EEPROM 64K - BIT CMOS E2PROM
|
Atmel, Corp. CATALYST[Catalyst Semiconductor]
|
AT27BV512 AT27BV512-70TU AT27BV512-70RI AT27BV512- |
512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
ATMEL Corporation
|
AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
AT28LV64B DOC233 AT28LV64B-20JC AT28LV64B-20TC AT2 |
64K (8K x 8) Low Voltage CMOS From old datasheet system 64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
|
ATMEL[ATMEL Corporation]
|
AT27LV512A07 AT27LV512A-55RU AT27LV512A-90JI AT27L |
90NS, SOIC, IND TEMP, GREEN(EPROM) 64K X 8 OTPROM, 55 ns, PDSO28 512K (64K x 8) Low Voltage OTP EPROM
|
Atmel, Corp. ATMEL Corporation
|
AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
AT24C64A AT24C64A-10PI-1.8 AT24C64A-10PI-2.7 AT24C |
32/64K, 2-Wire Bus Serial EEPROM w/Cascadable Features, Full Write Protect and high speed at medium voltage. 2-Wire Serial EEPROM 32K (4096 x 8) 64K (8192 x 8)
|
ATMEL[ATMEL Corporation]
|
P4C187-20PC P4C187-20PI P4C187-20PM P4C187-20PMB P |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 35 ns, QCC28 64K X 1 STANDARD SRAM, 35 ns, CDIP22
|
Pyramid Semiconductor C... Pyramid Semiconductor Corporation
|
W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28 Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 64K X 8 ELECTRICALLY ERASABLE EPROM
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Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
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