| PART |
Description |
Maker |
| CMLDM5757 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor Corp
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| CTLM7110-M832D |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
| CTLM8110-M832D |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
| CMRDM357510 |
SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
|
http://
|
| MTP5N40E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conduct...
|
| IRF820 IRF823 IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| CTLDM7120-M563 |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CEDM8001 |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
