| PART |
Description |
Maker |
| HYMD132645BL8-H HYMD132645BL8-M HYMD132645BL8-L HY |
SDRAM|DDR|32MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX64 |的CMOS |内存| 184PIN |塑料
32Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x16 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
SUSUMU Co., Ltd.
|
| HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor
http://
|
| W3DG6433V-JD1 W3DG6433VXXXJD1MF W3DG6433VXXXJD1MG |
256MB - 32Mx64 SDRAM, UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6433V10D2 W3DG6433V75D2 WED3DG6333V75D2 W3DG64 |
256MB- 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WV3EG6434S262BD4 WV3EG6434S335BD4 WV3EG6434S265BD4 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| NT256S64VH8A0GM-75B NT256S64VH8A0GM-7K NT256S64VH8 |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
| HYB39S256400D HYB39S256400DTL-6 HYB39S256400DTL-7 |
256 MBit Synchronous DRAM
SDRAM Components - 256Mb (16Mx16) FBGA PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) FBGA PC133 2-2-2
SDRAM Components - 256Mb (16Mx16) PC133 2-2-2
SDRAM Components - 256Mb (64Mx4) FBGA PC133 2-2-2
256-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
