| PART |
Description |
Maker |
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| M68762SL 68762SL |
From old datasheet system
Silicon Bipolar Power Amplifier, 350-400MHz 30W FM Mobile
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| LA4725 1531 |
2-Channel BTL Power Amplifier (30W 30W) with Standby Switch for Car Stereos(用于汽车立体声双BTL功率放大器（30W 30W，带备用开关）)
Monolithic Linear IC
From old datasheet system
2-Channel BTL Power Amplifier 30 W 30 W with Standby Switch for Car Stereos
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| M67741H 67741H M67741 |
RF POWER MODULE 150-175MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz /12.5V /30W / FM MOBILE RADIO
150-175MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
150-175MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TDA7265B |
30W 30W stereo amplifier
|
STMicroelectronics
|
| 2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors
Bipolar Junction Transistor
SILICON PNP TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 2N1483E3 2N1485E3 2N1484E3 |
BJT( BiPolar Junction Transistor)
PNP Transistor
|
Microsemi
|
| JANSG2N2369A JANS2N2369AUA |
BJT( BiPolar Junction Transistor)
NPN Transistor
|
Microsemi
|
