| PART |
Description |
Maker |
| NE552R479A-T1A-A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Laboratories
|
| NE46134-T1-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
California Eastern Laboratories
|
| NE650103M |
NECS 10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
ETC[ETC]
|
| NE722S01 NE722S01-T NE722S01-T1B1 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
Duracell
NEC Corp.
NEC[NEC]
|
| AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| UPG2024TQ-E1-A |
NECs GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN
|
California Eastern Laboratories
|
| NE3503M04-T2-A NE3503M04-A |
PC 3C 3#16 PIN RECP
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET 邻舍C至超级Ku波段低噪声和高增益放大器 - CHANNER黄建忠场效应
|
California Eastern Laboratories, Inc.
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管（培养基检测器和调音台的应用气密陶瓷封装垒二极管）
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| AU-1049-70-1179 AU-1049-70-N-1179 AU-1372-140-N AU |
50 MHz - 90 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
30 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
50 MHz - 1000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MITEQ INC
|
| 5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
