| PART |
Description |
Maker |
| MLD2N06CL ON2069 MLD2N06CL-D |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET
From old datasheet system
Internally Clamped, Current Limited N hannel Logic Level Power MOSFET
SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET
|
Motorola, Inc.
ON Semiconductor
|
| MGP20N35CL_D ON1862 MGP20N35CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V CE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| STGP20NB37LZ |
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED POWERMESH IGBT
|
ST Microelectronics
|
| STGB10NB37LZ |
N-Channel Clamped 10A-D2PAK Internally Clamped PowerMESHTM IGBT(N沟道绝缘栅双极晶体管) N通道钳位10A条，采用D2PAK内部钳位PowerMESHTM IGBT的（不适用沟道绝缘栅双极晶体管
|
STMicroelectronics N.V.
|
| STGB20NB37LZ |
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT N通道钳位20A条采用D2PAK IGBT的内部钳位PowerMESH
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STGB10NB40LZT4 STGB10NB40LZ |
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRGS14B40L |
14A, Voltage Clamped 400V IGBT(14A,电压箝位400V双极型晶体管)
|
International Rectifier
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LS33401111 LY3340-M LG3340 LG3340-KN LG3340-L LG33 |
T1(3mm) LED LAMP T1毫米）发光二极管
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FS100UM-03 |
100 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
Bench Power Supply; Output Voltage:30V; Output Current:3A; Number of Outputs:3; Calibrated:Yes; Certificate of Calibration:Yes; Output Current 2:.5A; Output Current 3:.5A; Output Voltage 2:12V; Output Voltage 3:5V
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
