| PART |
Description |
Maker |
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| AWS5503 AWS5503S15 |
The AWS5503 is a Single Pole Double Throw (SPDT) GaAs MMIC assembled in a MSOP-8 plastic package.
GaAs IC High Power SPDT Reflective Switch Positive Control DC-3 GHz
|
Anadigics Inc
|
| TC1606N |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLL21E040IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E004ME |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| MGF1601B-01 |
High-power GaAs FET
|
Mitsubishi Electric Sem...
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| FLL810IQ-4C |
L-Band High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| MSC8004 |
HIGH POWER GaAs FET
Transistor
|
ASI
Advanced Semiconductor
|
