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KMM53632004BKG - 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V

KMM53632004BKG_462350.PDF Datasheet


 Full text search : 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
 Product Description search : 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V


 Related Part Number
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KMM53632000CKG KMM53632000CK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
M372F3200DJ3-C 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V 32M × 72配置,带ECC DRAM的内存使6Mx4K
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KMM53216004BK KMM53216004BKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
SAMSUNG SEMICONDUCTOR CO. LTD.
KMM53216004CK KMM53216004CKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
Samsung semiconductor
KMM53616000BKG KMM53616000BK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
M374F3200DJ1-C M374F3280DJ1-C 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
SAMSUNG SEMICONDUCTOR CO. LTD.
M372F3280DJ3-C M372F3200DJ3-C 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
SAMSUNG[Samsung semiconductor]
KMM374F3280BK 32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
Samsung Semiconductor Co., Ltd.
MT46V32M16P-5BC MT46V32M16BN-6C 32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
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Micron Technology, Inc.
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT 8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
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128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
Infineon Technologies AG
H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84
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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
 
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