| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SC4667 E000971 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING COMPUTER COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| 1SS426 |
Switching diode
Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|
| HN2D02FUTW1T1 HN2D02FUTW1T1/D HN2D02FUTW1T1G |
Ultra High Speed Switching Diodes
Ultra High Speed Switching Diodes
|
ON Semiconductor
|
| 1SS30207 1SS302-07 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS196 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| L1SS184LT1G |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS387 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS19307 1SS193 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN1D04FU |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
