| PART |
Description |
Maker |
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| JS28F256P30B95A RD48F4000P0ZBQ0 JS28F128P30T85A TE |
Numonyx StrataFlash Embedded Memory
Numonyx?StrataFlash? Embedded Memory (P30)
|
Micron Technology
Numonyx B.V
|
| MB81ES171625-15WFKT-X MB81ES173225-15WFKT-X |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 单数据传输速率女的FCRAM消费/嵌入式SIP应用程序特定的内
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 1M X 16 SYNCHRONOUS DRAM, 12 ns, UUC84
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 512K X 32 SYNCHRONOUS DRAM, 12 ns, UUC84
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| JS28F128J3D-75 JS28F320J3D-75 PC28F128J3D-75 TE28F |
Numonyx?/a> Embedded Flash Memory (J3 v. D)
Numonyx Embedded Flash Memory (J3 v. D)
|
Intel Corporation
Numonyx B.V
|
| PLF2224 |
24 + 2G Switch on a Chip with Embedded Memory
|
INFINEON[Infineon Technologies AG]
|
| PC48F4400P0VB00 RC28F640P30B85 JS28F640P30B85 RC28 |
Numonyx StrataFlash Embedded Memory
|
Numonyx B.V
|
| RC28F256 |
Intel StrataFlash Embedded Memory
|
Intel Corporation
|
| M29F800FB55N3E2 |
Micron Parallel NOR Flash Embedded Memory
|
Micron Technology
|
| TE28F640P30 |
(TE28FxxxP30) Strata Flash Embedded Memory
|
Intel Corporation
|
| TE28F256P30 |
(TE28FxxxP30) Strata Flash Embedded Memory
|
Intel Corporation
|
| S34ML02G1 S34ML02G100BFI000 S34ML02G100BFI003 S34M |
Spansion? SLC NAND Flash Memory for Embedded
|
SPANSION
|
| SAA4998H |
Field and line rate converter with noise reduction and embedded memory
|
NXP Semiconductors
|
