| PART |
Description |
Maker |
| RA08N1317M_06 RA08N1317M RA08N1317M-101 RA08N1317M |
RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67755L |
150-175MHz / 7.2V / 7W / FM PORTABLE RADIO
135-150MHz, 7.2V, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57732 57732 |
144-175 MHz, 12.5V, 7W, FM PORTABLE RADIO
144-175MHZ, 12.5V,7W, FM POPHTABLE RADIO
From old datasheet system
144-175MHz 12.5V /7W /FM PORTABLE RADIO
144-175MHz 12.5V,7W,FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| RA08H1317 RA08H1317M RA08H1317M-01 RA08H1317M-E01 |
TV 2C 2#16 SKT RECP 135 - 175MHz瓦特12.5V便携移动通信
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:2; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric Sem...
|
| RA13H1317M10 |
135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| M67748HR |
RF POWER MODULE 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| M67748LR |
RF POWER MODULE 135-150MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| D1004 D1004UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1005 D1005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab PLC
SEME-LAB[Seme LAB]
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
