| PART |
Description |
Maker |
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q67100-Q2079 HM72V160 HYM72V1600GS-50- HYM72V1600G |
From old datasheet system
16M x 72-Bit Dynamic RAM Module
|
SIEMENS[Siemens Semiconductor Group]
|
| MC-4516CB647XF-A75 MC-4516CB647EF-A75 MC-4516CB647 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-45V16AB642KF-A75 |
16M-WORD BY 64-BIT VirtualChannel DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-4516CA727XFA-A75 MC-4516CA727XFA |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,60072位同步动态随机存储器模块无缓冲型
CAP 1.5UF 600VDC POLY FILM AXIAL
|
Elpida Memory, Inc.
|
| HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
