| PART |
Description |
Maker |
| K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48S16030 KM48S16030T-G_F10 KM48S16030T-G_F8 KM48 |
4M x 8Bit x 4 Banks Synchronous DRAM
4M x 8Bit x 4 Banks Synchronous DRAM 4米8位4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM48S8030B |
2M x 8Bit x 4 Banks Synchronous DRAM(2M x 8x 4组同步动态RAM) 200万8位4银行同步DRAM米8位4组同步动态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM48S16030AT-G_F8 KM48S16030AT-G_FH KM48S16030AT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
