| PART |
Description |
Maker |
| BAW78C Q62702-A779 BAW78A Q62702-A784 BAW78A-BAW78 |
Silicon Switching Diodes (Switching applications High breakdown voltage) 1 A, SILICON, SIGNAL DIODE
From old datasheet system
|
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| BSS81 BSS79C BSS79B BSS81C BSS79 BSS81B |
NPN Silicon Switching Transistors
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BAR74 Q62702-F704 |
From old datasheet system
Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
| SMBD7000 MMBD7000 SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| H7P0601DL H7P0601DS |
Transistors>Switching/MOSFETs
Silicon P Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| Q62702-A693 BAV74 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| H7N0312LM H7N0312LS H7N0312LD |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
| H5N2003P H5N2003P-E |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
