| PART |
Description |
Maker |
| RN2907FE RN2909FE RN2908FE |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA2070 |
TOSHIBA Transistor Silicon PNP Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2104 RN2103 RN2101 RN2102 RN2106 RN2105 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2409 RN2407 RN2408 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1020-Y |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| RN2911 RN2910 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2310 RN2311 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1832-GR 2SA1832-Y |
Audio Frequency General Purpose Amplifier Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
| Q62702-F1063 BFT93 |
PNP Silicon RF Transistor for broadba...
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
| RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BC490A BC490-D BC490AZL1 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92
From old datasheet system
High Current Transistors PNP Silicon
PNP Silicon Plastic Transistor
|
ON Semiconductor
|
