| PART |
Description |
Maker |
| MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NEZ1011-8E NEZ1414-8E |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十，KU波段功率GaAs MESFET
8W X / Ku-BAND POWER GaAs MESFET
8W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| AFM06P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip
|
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
| HWF1686RA |
5.4 W L-band GaAs power FET
|
HEXAWAVE
|
| FLC103WG |
C-Band Power GaAs FETs
|
Fujitsu
|
| FMC2122LN-03 |
K-Band Power GaAs Modules
|
Fujitsu
|
| HWF1687RA |
7.5 W L-band GaAs power FET
|
HEXAWAVE
|
