| PART |
Description |
Maker |
| MT58L128L18F |
128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脉冲静态RAM)
|
Micron Technology, Inc.
|
| M48Z2M1Y M48Z2M1Y-70PL1 M48Z2M1Y-70PL9 M48Z2M1YPL |
16 Mb (2Mb x 8) ZEROPOWER SRAM
122 x 32 pixel format, Compact LCD size
16 Mb 2Mb x 8 ZEROPOWER SRAM
|
SGS Thomson Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
|
Micron Technology, Inc.
|
| MT58L512L18P MT58L256L32P |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| MT58L512L18D MT58L256L32D MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| MT58L256L36D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
Micron Technology
|
| HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| EMS256K8B |
2Mb CMOS Static SRAM
|
Elmo Semiconductor
|
| MT55L128L18F1 |
128K x 18, 3.3V I/O,ZBT SRAM(2Mb,3.3V输入/输出，静态RAM)
|
Micron Technology, Inc.
|
| M48Z2M1V 5135 M48Z2M1Y-70PL1 M48Z2M1-70PL1 M48Z2M1 |
16 MBIT (2MB X 8) ZEROPOWER SRAM
From old datasheet system
|
STMicroelectronics
SGS Thomson Microelectronics
|
