| PART |
Description |
Maker |
| FLL310IQ-3A |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E010MK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E004ME |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1501N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1606 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1401 |
0.5 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1501 |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1706 |
3 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| SW-106PIN SW-276PIN SW-106SW-276 |
High Power GaAs SPDT Switch DC - 3 GHz
SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 3 A, Pin Plunger Actuator, Solder Termination
High Power GaAs SPDT Switch DC3 GHz
Schottky Barrier Diodes
|
Tyco Electronics
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
