| PART |
Description |
Maker |
| UPD5702 UPD5702TU-E2-A UPD5702TU |
NECs 2.4 GHz Si LD MOS POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| MC-7831-HA MC-7831-HA-AZ |
NECs 1 GHz GaAs CATV 18 dB PUSH-PULL AMPLIFIER
|
California Eastern Laboratories
|
| MC-7831-HA MC-7831-HA-AZ |
NECs 1 GHz GaAs CATV 18 dB PUSH-PULL AMPLIFIER
|
CEL[California Eastern Labs]
|
| MC-7831-HA_07 MC-7831-HA MC-7831-HA-AZ |
NECs 1 GHz GaAs CATV 18 dB PUSH-PULL AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPG2024TQ UPG2024TQ-E1-A |
NECs GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN
|
California Eastern Labs
|
| NE650103M |
NECS 10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
ETC[ETC]
|
| UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65，一百二十九分之一百二十八
1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp.
NEC Corp.
|
| NE552R479A-T1A-A NE552R479A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
CEL[California Eastern Labs]
|
| APT6017WVR |
POWER MOS V 600V 31.5A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT8065 APT8065AVR |
POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
