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RM500DZ-M - Rectifier Diodes, 800V Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 BATTERY SEALED LEAD ACID 12V 5AH 大功率常规使用绝缘型 BATT SEALED LEAD ACID 12V 50AH 大功率常规使用绝缘型

RM500DZ-M_432735.PDF Datasheet


Part No.	RM500DZ-M RM500DZ-H RM500UZ-M RM500DZ-24 RM500DZ-2H RM500UZ-24 RM500UZ-2H RM500UZ-H
Description	Rectifier Diodes, 800V Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 BATTERY SEALED LEAD ACID 12V 5AH 大功率常规使用绝缘型 BATT SEALED LEAD ACID 12V 50AH 大功率常规使用绝缘型
File Size	50.03K / 3 Page
Maker	Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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