| PART |
Description |
Maker |
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| SD2900 SD2902 SD2903 SD3932 SD3933 PD57002 PD84001 |
HF TO 2000 MHZ CLASS AB COMMON SOURCE - POWERSO-10RF
|
ETC[ETC]
|
| 23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor
0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| MS2472 |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 550; P(in) (W): 150; Gain (dB): 5.6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: M112 L BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| 500L-058X181-502 500T-058X071-501 500T-058X071-502 |
5000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
500:5 A, 2 % ACCURACY CLASS, CURRENT TRANSFORMER
4000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
400:5 A, 3 % ACCURACY CLASS, CURRENT TRANSFORMER
750:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
2500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1200:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
|
GE Industrial Systems
|
| A82015C0GL5 A82120C0GL5 A68015C0GL5 A56015C0GL5 A5 |
Axial Leaded Multilayer Ceramic Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 200 VDC, 500 VDC
|
Vishay Siliconix
|
| XD010-51S-D4F XD010-51S-D4FY XD010-51S-D4F1 |
902 MHz - 928 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
902-928 MHz Class A/AB 15W Power Amplifier Module
|
RF MICRO DEVICES INC
http://
SIRENZA MICRODEVICES
|
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