| PART |
Description |
Maker |
| KM23C8105D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16)掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C8100DET KM23C8100ET |
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| HY29F800 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
Hynix Semiconductor
|
| HY29F800ABG-90 HY29F800ABG-70I HY29F800ABG-90I HY2 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
http://
|
| AC23V8000 |
From old datasheet system
1MX8 BIT CMOS MASK ROM
|
Electronic Theatre Controls, Inc.
ETC
|
| MX29LV800AT |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix
|
| MX29LV800T MX29LV800B MX29LV800TTC-90 MX29LV800TTC |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
N.A.
MCNIX[Macronix International]
|
| MX29LV800A |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MXIC
|
| K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF |
CONNECTOR ACCESSORY
512Kx16 bit Low Power Full CMOS Static RAM
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS616LV8018 BS616LV8018FIP70 BS616LV8018FC BS616LV |
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| MX26LV800BXBC-70G MX26LV800TXBC-70G MX26LV800BXBC- |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
