| PART |
Description |
Maker |
| HL6722G |
AlGalnP Laser Diode(AlGalnP激光二极管)
|
Hitachi,Ltd.
|
| DL-3038-041 |
Index Guided AlGalnP Laser Diode
Index Guided AlGalnP Laser Diode 指数导AlGalnP激光二极管
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| DL-3148-033 |
Index Guided AlGalnP Laser Diode
|
SANYO[Sanyo Semicon Device]
|
| DL-3148-023 |
LED Mount; Bulb Size:T-1; LED Color:High Efficiency Red; Luminous Intensity:30mcd; Viewing Angle:45 ; Forward Current:30mA; Forward Voltage:2V; Operating Temperature Range:-40 C to 85 C; Leaded Process Compatible:Yes RoHS Compliant: Yes
AlGalnP Laser Diode
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| SLD105UL |
Low Power GaAIAs Laser Diode(低功耗镓铝砷激光二极管)
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
