| PART |
Description |
Maker |
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX25L3235EZNI10G MX25L3235EM2I10G MX25L3235EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25U3235E MX25U3235EZNI10G MX25U3235EM2I10G |
32M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system
|
Mitsubishi
|
| AM41DL16X4D AM41DL1614DT70IS SPANSIONLLC-AM41DL162 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
http://
ADVANCED MICRO DEVICES INC
SPANSION LLC
Advanced Micro Devices, Inc.
|
| CAT28F001 CAT28F001P-12BT CAT28F001TI-70BT CAT28F0 |
90ns 1M-bit CMOS boot block flash memory
70ns 1M-bit CMOS boot block flash memory
150ns 1M-bit CMOS boot block flash memory
120ns 1M-bit CMOS boot block flash memory
120ns 1M-bit CMOS Boot Block Flash Memory
1 Megabit CMOS Boot Block Flash Memory
|
CATALYST[Catalyst Semiconductor]
|
| M5M29KE131BVP |
Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Renesas Electronics Corporation
|
