| PART |
Description |
Maker |
| SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2，4，8时钟发生器芯片（5V/3.3V ÷ 2，4，8时钟发生芯片
LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16
5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP
5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP
5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP
5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
|
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
|
| ICM7555CBA ICM7555IBA ICM7556MJD ICM7555 ICM7555IP |
Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector
General Purpose Timer, Dual, CMOS
Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector 低功耗、通用定时
Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector SQUARE, 1 MHz, TIMER, PDIP8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| SY100S834 SY100S834L SY100S834Z SY100S834ZC SY100S |
RELAY, DPDT, 1A, 5VDC
(±1, ±2, ±4) OR (±2, ±4, ±8) CLOCK GENERATION CHIP
(1 2 4) OR (2 4 8) CLOCK GENERATION CHIP
(÷1, ÷2, ÷4) OR (÷2, ÷4, ÷8) CLOCK GENERATION CHIP
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| MC100LVEL38 MC100LVEL38DW MC100EL38 MC100EL38DW ON |
, /6 Clock Generation Chip
2, 4/6 Clock Generation Chip
From old datasheet system
±2, ±4/6 Clock Generation Chip
|
Motorola, Inc
ONSEMI[ON Semiconductor]
|
| M5LV-256_104-10VC M5LV-256_104-10VI M5LV-256_104-1 |
7ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
20ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
10ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
15ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
|
LATTICE[Lattice Semiconductor]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| APT30GT60CR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 30A
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT8GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 17A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT12GT60BR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs
Thunderbolt IGBT 600V 25A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs
|
ADPOW[Advanced Power Technology]
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
| APT50GF120JRD |
Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
