PART |
Description |
Maker |
K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
|
K4H561638F |
DDR SDRAM 256Mb F-die
|
SAMSUNG
|
K4H560838N |
256Mb N-die DDR SDRAM
|
Samsung
|
K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/ |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 184-Pin Unbuffered Dual-In-Line Memory Modules DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二 DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
256MBDDRSDRAM K4H561638B K4H560838B K4H560438B |
256Mb DDR SDRAM DDRSDRAMSpecificationVersion0.3 DDR SDRAM Specification Version 0.3
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor http://
|
HYS72D16000GR HYS72D16000GR-7-A HYS72D16000GR-8-A |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank Registered DDR SDRAM-Modules
|
Infineon Technologies AG
|
HYMD232646B8J-D4 HYMD232646B8J-D43 HYMD232646B8J-J |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|