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HC26 - NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through DIODE ZENER 150MW 33V 0603 RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容 MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容 RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容 RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容

HC26_419955.PDF Datasheet

 
Part No. HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K HC26R2A472K HC26R2A562K HC26R2A682K HC26R2A822K HC26R2E332K HC26R2E472K HC26R2E562K HC26R2E682K HC26R2E822K HC35R2A153K HC35R2A183K HC35R2A223K HC35R2A273K HC35R2E103K HC35R2E123K HC35R2J222K HC38R2A333K HC38R2A473K HC38R2A563K HC38R2A683K HC38R2E153K HC38R2E183K HC38R2E223K HC38R2E333K HC38R2E473K
Description NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole
Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through
DIODE ZENER 150MW 33V 0603
RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容
MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容
RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容
RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容

File Size 36.79K  /  1 Page  

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 Full text search : NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through DIODE ZENER 150MW 33V 0603 RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容 MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容 RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容 RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
 Product Description search : NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through DIODE ZENER 150MW 33V 0603 RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容 MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容 RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容 RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容


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