| PART |
Description |
Maker |
| TE28F640B3 |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory
|
Intel Corporation
|
| TE28F016C3B110 TE28F016C3B90 TE28F016C3T110 TE28F0 |
3 VOLT ADVANCED BOOT BLOCK 8- 16- 32-MBIT FLASH MEMORY FAMILY 3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| 28F160C3 28F016C3 28F032C3 28F320C3 28F800C3 TE28F |
3 VOLT ADVANCED BOOT BLOCK, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3 VOLT ADVANCED BOOT BLOCK 8-/ 16-/ 32-MBIT FLASH MEMORY FAMILY
|
Intel
|
| RD38F1010C0ZTL0 RD38F1020C0ZTL0 RD28F1602C3T110 RD |
3 VOLT INTEL Advanced BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
|
INTEL[Intel Corporation]
|
| TE28F640C3 TE28F160C3 TE28F800C3 28F160C3 28F320C3 |
3 Volt Intel Advanced Boot Block Flash Memory IC, DIGITAL, 1 GATE SCHMITT-TRIGGER, INVERTER, CMOS, 1.65-5.5V, 4.6NS, SC-70-5,
|
INTEL[Intel Corporation] Intel Corp.
|
| AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏,只有闪存
|
Atmel Corp. Atmel, Corp.
|
| BUL54BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|
| BUL56B BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL68B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
| BUL54 BUL54A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|