| PART |
Description |
Maker |
| LDB211G9020C-001 LDB21906M20C-001 LDB21906M05C-001 |
Chip Multilayer Hybrid Baluns 1800 MHz - 2000 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 887 MHz - 925 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 800 MHz - 1000 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 1500 MHz - 1700 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 1600 MHz - 1800 MHz RF TRANSFORMER
|
Murata Manufacturing Co., Ltd.
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| GA1L3M GA1L3M-T2 GA1L3M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GN1F4N GN1F4N-T1 GN1F4N-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GN1L3N GN1L3N-T2 GN1L3N-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GN1F4M GN1F4M-T2 GN1F4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| CP616 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
| CP617 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
