| PART |
Description |
Maker |
| PTF180101M |
High Power RF LDMOS Field Effect Transistor 10 W, 1.0 鈥?2.0 GHz
|
Infineon Technologies AG
|
| PTF080101M |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ?960 MHz
|
Infineon Technologies AG
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| MAPL-000817-015CPC-072706 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
MACOM[Tyco Electronics]
|
| MAPLST2122-015CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
|
Tyco Electronics
|
| MAPLST0810-030CF MAPLST0810-030CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
|
MACOM[Tyco Electronics]
|
| MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
