| PART |
Description |
Maker |
| VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Semiconductors
Vishay Siliconix
|
| 2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V.
12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
GE[General Semiconductor]
GE Security, Inc.
|
| IRKL41-06 IRKL41-08 IRKL41-14 |
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 800 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system
Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE
Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MCR264-4-D MCR264-4 |
Silicon Controlled Rectifier Reverse Blocking Thyristor(40A400V硅控整流器反向截止晶闸管) 40 A, 200 V, SCR, TO-220AB
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| 55C07 55C80BF 55C120B 55C100B 55C100BF |
Silicon Controlled Rectifier
86 A, SCR, TO-208AD
Silicon Controlled Rectifier
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
| C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V.
4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State
GESS[GE Solid State]
http://
|
| BYV27-600 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV2 |
Ultra fast low-loss controlled avalanche rectifiers 1.25 A, 300 V, SILICON, RECTIFIER DIODE
1/2" NPT Bracket; Style: Bracket; Applicable Model: LU7 / LHE-A 1.3 A, 100 V, SILICON, RECTIFIER DIODE
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
|
