| PART |
Description |
Maker |
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| 3SK249 E001708 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
Sanyo Semicon Device
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF908WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF996S |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Philips Semiconductors
|
| 3SK322 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
| 3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| 3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK296 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
