| PART |
Description |
Maker |
| UPD27C2001D |
262144 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32
Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes
IC DRIVER 1/2BRDG LOW SIDE 16DIP
DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
| HT27C020 27C020 |
OTP CMOS 256Kx 8-Bit EPROM
OTP CMOS 256K′ 8-Bit EPROM
From old datasheet system
|
Holtek Semiconductor In...
Holtek Semiconductor Inc
|
| M5M5V416CWG-55HI02 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
http://
Renesas Electronics Corporation
|
| M5M5V208VP-10LL-W M5M5V208RV-12L-W M5M5V208RV-12LL |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM
262144-word x 8-bit High Speed CMOS Static RAM
|
Vishay Intertechnology, Inc.
SONY
|
| M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
http://
RENESAS[Renesas Electronics Corporation]
|
| GM71C4256BJ GM71C4256BJ-70 GM71C4256B GM71C4256BZ- |
262144 word x 4 Bit CMOS DRAM
New Generation Dynamic RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
http://
|
