| PART |
Description |
Maker |
| MB84VD23381HJ-70 MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Advanced Micro Devices
|
| MB84VD22398EJ-90 MB84VD22398EJ-85 MB84VD2239XEJ-85 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM
2-Stacked MCP
|
SPANSION[SPANSION]
Fujitsu
|
| MB84VD2108XEM-70 E550306 MB84VD2109XEM-70PBS MB84V |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
From old datasheet system
2-Stacked MCP
|
SPANSION[SPANSION]
Fujitsu
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
TRIMMER, 15 TURN 20K
CONN HEADER 12POS DL PCB 30GOLD
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXA |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| K8D1716UTC K8D1716UTC-PC07 K8D1716UBC K8D1716UTC-T |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY
|
MCNIX[Macronix International]
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M36W416TG-ZAT M36W416BGZA M36W416BG70ZA1T M36W416B |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
|
ST Microelectronics
|
| M36W416TG 9175 M36W416TGZA M36W416BG70ZA1T M36W416 |
From old datasheet system
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
