PART |
Description |
Maker |
KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM) CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块)
|
Fujitsu Limited Fujitsu, Ltd.
|
MB8502E064AB-70 MB8502E064AB-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM 1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
MB814400A-80 MB814400A-60 MB814400A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存)
|
Fujitsu, Ltd.
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
NN511000 |
CMOS 1M x 1 Bit DRAM
|
NPN
|
UPD424260G5-70-7JF |
CMOS 4M Bit DRAM
|
NEC
|
HY5117410 |
4M x 4-Bit CMOS DRAM
|
Hyundai Electronics
|