| PART |
Description |
Maker |
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| MB814100D-60 MB814100D-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
CMOS 4 M ?1 BIT Fast Page Mode DRAM(CMOS 4 M ?1浣??椤甸?瀛??妯″??ㄦ?RAM)
|
Fujitsu Limited
|
| MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM
1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
| MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存）
|
Fujitsu, Ltd.
|
| LH64256BK-60 |
CMOS 4-Bit DRAM
|
ETC
|
| HY514400A HY514400AJ HY514400ALJ HY514400ALR HY514 |
1M x 4-bit CMOS DRAM
|
List of Unclassifed Manufacturers
|
| HY514400 HY514400J |
1M x 4-bit CMOS DRAM
|
ETC
|
| HY514400 |
1M x 4-Bit CMOS DRAM
|
Hyundai
|
| UPD424260G5-70-7JF |
CMOS 4M Bit DRAM
|
NEC
|
| HY5117404A |
4M x 4-Bit CMOS DRAM
|
Hyundai Electronics
|
