| PART |
Description |
Maker |
| LT5503EFEPBF |
1.2GHz to 2.7GHz Direct IQ Modulator and Mixer; Package: TSSOP; No of Pins: 20; Temperature Range: -40°C to 125°C 1200 MHz - 2700 MHz RF/MICROWAVE I/Q MODULATOR
|
Linear Technology, Corp.
|
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| MAX2021 |
High-Dynamic-Range, Direct Up-/Downconversion 650MHz to 1200MHz Quadrature Mod/Demod
|
Maxim Integrated Products, Inc.
|
| MAX2023ETX-T MAX2023ETX MAX2023ETX_T MAX2023 MAX20 |
High-Dynamic-Range, Direct Up-/Downconversion 1500MHz to 2300MHz Quadrature Mod/Demod
|
Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
|
| MAX2021ETX MAX2021ETXT MAX202113 |
High-Dynamic-Range, Direct Up-/Downconversion 650MHz to 1200MHz Quadrature Mod/Demod
|
Maxim Integrated Products
|
| 2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662 |
High-Frequency Amplifier Transistor(11V 50mA 3.2GHz)
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM[Rohm]
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| C450DA700-0207 C450DA700-0209 C450DA700-0214 C460D |
Direct Attach LED Technology Rectangular LED RF Performance
Direct Attach DA700 LEDs
|
Cree, Inc
Marktech Corporate
|
| TPD03-0.5G02S |
0.5-2GHz 3-Way Power Divider
|
Transcom, Inc.
|
