| PART |
Description |
Maker |
| M5M5256DFP-70VLL-W M5M5256DFP-85VXL-W M5M5256DRV-7 |
From old datasheet system
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC -40 to 85
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M5256DFP-70VLL M5M5256DFP-70VXL M5M5256DFP-85VLL |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CXK5V8257BTM/BYM/BM-10LL CXK5V8257BTM/BYM/BM-70LL |
32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| M5M5279-25 M5M5279-35 M5M5279-35L M5M5279J-20 M5M5 |
294912-BIT (32768-WORD BY 9-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC55V1664BJ-12 TC55V1664BFT-10 |
64K Word x 16 Bit CMOS Static RAM(64Kx 16 CMOS 静RAM)
64K Word x 16 Bit CMOS Static RAM(64K瀛?x 16 浣?CMOS ???RAM)
|
Toshiba Corporation
|
| CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM
131072-word ? 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM
128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K X 8 STANDARD SRAM, 120 ns, PDSO28
32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions
8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8,192字8位高速CMOS静态RAM
|
http://
SONY[Sony Corporation]
|
| M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
From old datasheet system
1048576-1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
