| PART |
Description |
Maker |
| AT24C01B-TSU-T AT24C01BN-SH-T AT24C01B-TH-B AT24C0 |
DIE SALE, 1.8V, 11 MIL(SERIAL EE) 128 X 8 I2C/2-WIRE SERIAL EEPROM, UUC
|
聚兴科技股份有限公司
Atmel, Corp.
|
| MC68VZ328 |
DragonBall 32-Bit Microprocessor( DragonBall32位微处理
|
Motorola, Inc.
|
| 5017-013 |
Closeout sale in progress
|
List of Unclassifed Man...
|
| BR729D MC68000 M68000AD M68000UM M68000PM |
Addendum to M68000 User Manual
Communications and Advanced Consumer Technologies Group
M68000 USERS MANUAL ADDENDUM M68000用户手册增补
Integrated Portable System Processor-DragonBall
|
Motorola Inc
Motorola, Inc.
Kingbright, Corp.
|
| MH88437 MH88437-P MH88437AD-P MH88437AD-PI MH88437 |
0.3-6.0V; data access arrangement. For FAX/modem, electronic point of sale, security system
Data Access Arrangement Advance Information 数据访问安排进展信息
|
Mitel Semiconductor
Mitel Networks Corporation
Mitel Networks, Corp.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| HTCICC6402FUG HTCICC6403FUG |
HITAG RO64 Transponder IC
HTCICC64; HITAG RO64 transponder IC HTCICC6402FUG/AM<Uncased die|<<<1<Always Pb-free,;HTCICC6403FUG/AM<Uncased die|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| IXTD8P50-5B IXTD16P20-5B IXTD36P10-5B |
500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
200 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
|
IXYS, Corp.
|
| IXFK44N50F IXFX44N50F |
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
FILM/M CAPACITANCE=4.7 VOLT=100
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
|
IXYS, Corp.
ETC[ETC]
IXYS[IXYS Corporation]
|
