| PART |
Description |
Maker |
| KMM5321200C2W KMM5321200C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| EDI416S4030A12SI EDI416S4030A10SI EDI416S4030A |
1Mx16 Bits x 4 Banks Synchronous DRAM
|
WEDC[White Electronic Designs Corporation]
|
| KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| TC51V16165BFT-70 |
DRAM,EDO,1MX16,CMOS,TSOP,50PIN,PLASTIC
From old datasheet system
|
Toshiba.
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5362000B KMM5362000BG |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM53216004CK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
