| PART |
Description |
Maker |
| PBG |
Dual Linear Bar Graph, Two Separate Bar Graphs, Continuous but Precisely Controlled Bar Length
|
Vishay
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| 1SS388 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
|
Pan Jit International Inc.
|
| RB706F-40 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| CTS05S30 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
| DSR05S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| SCS40STN |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RB751V-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SDB704CA |
Silicon Epitaxial Planar Schottky Barrier Diode
|
SEMTECH ELECTRONICS LTD.
|
| SCS520DS |
0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| 1SS239 |
Silicon Epitaxial Schottky Barrier Type Diode
|
ETC
|
| SB160M-40 |
Silicon Epitaxial Planer Schottky Barrier Diode
|
SEMTECH ELECTRONICS LTD.
|
