| PART |
Description |
Maker |
| BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 |
CASE 318-08 STYLE 6 SOT-23 (TO-236AB)
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
CIR 4C 4#0 FR PIN PLUG
High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Silicon General Purpose Transistors NPN硅通用晶体
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| BSS123LT1 BSS123LT1_D ON0223 |
TMOS FET Transistor(N-Channel)
CASE 318-08, STYLE 21 SOT-23 (TO?36AB)
From old datasheet system
|
Motorola Inc
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| BAV70LT1 ON0132 |
CASE 318-08, STYLE 9 SOT-23 (TO-236AB)
From old datasheet system
Monolithic Dual Switching Diode Common Cathode
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2N7002LT1 ON0106 |
CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
|
| BAS16WT1 ON0115 |
CASE 419-02, STYLE 2 SC-70/SOT-323
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| 2N5208 |
CASE 29-04STYLE 2 TO-92(TO-226AA)
CASE 29-04,STYLE 2 TO-92(TO-226AA)
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2N4036 2N4037 |
CASE 79.04, STYLE 1 TO-39 (TO-205AD)
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
|
| 1N4981D 1N4973C 1N4955D 1N4957D 1N4957C 1N4964D 1N |
Diode Zener Single 91V 1% 5W 2-Pin Case E
Diode Zener Single 43V 2% 5W 2-Pin Case E
Diode Zener Single 7.5V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 2% 5W 2-Pin Case E
Diode Zener Single 18V 1% 5W 2-Pin Case E
Diode Zener Single 10V 2% 5W 2-Pin Case E
Diode Zener Single 12V 1% 5W 2-Pin Case E
Diode Zener Single 51V 1% 5W 2-Pin Case E
Diode Zener Single 36V 2% 5W 2-Pin Case E
Diode Zener Single 15V 1% 5W 2-Pin Case E
Diode Zener Single 20V 1% 5W 2-Pin Case E
Diode Zener Single 75V 1% 5W 2-Pin Case E
Diode Zener Single 100V 2% 5W 2-Pin Case E
Diode Zener Single 100V 1% 5W 2-Pin Case E
Diode Zener Single 11V 1% 5W 2-Pin Case E
Diode Zener Single 75V 2% 5W 2-Pin Case E
Diode Zener Single 56V 1% 5W 2-Pin Case E
Diode Zener Single 24V 1% 5W 2-Pin Case E
Diode Zener Single 24V 2% 5W 2-Pin Case E
Diode Zener Single 10V 1% 5W 2-Pin Case E
Diode Zener Single 13V 2% 5W 2-Pin Case E
Diode Zener Single 30V 1% 5W 2-Pin Case E
Diode Zener Single 39V 1% 5W 2-Pin Case E
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New Jersey Semiconductor
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