| PART |
Description |
Maker |
| SPP80N06S2L-11 SPB80N06S2L-11 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 11 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N04S2-04 SPP100N04S2-04 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; NL;3.6mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N04S2L-03 SPP100N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; LL;3.3mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N08S2-07 SPP100N08S2-07 |
Low Voltage MOSFETs - TO220/263; 100 A; 75V; NL; 7.1 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-09 SPB80N06S2L-09 |
Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IPI03N03LA IPP03N03LA IPB03N03LA |
OptiMOS®2 - Power packages
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 3.0mOhm, 80A, LL
OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPB73N03S2L-08 SPI73N03S2L-08 SPP73N03S2L-08 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 8.4mOhm, 73A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 8.1mOhm, 73A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05 |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
